SAVANTIC 2SA1535A

SavantIC Semiconductor
Product Specification
2SA1535 2SA1535A
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SC3944/3944A
·Optimum for the driver-stage of a 60W
to 100W output amplifier
APPLICATIONS
·For low-frequency driver and high
power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SA1535
VCBO
Collector-base voltage
-150
Open base
2SA1535A
VEBO
Emitter-base voltage
V
-180
2SA1535
Collector-emitter voltage
UNIT
-150
Open emitter
2SA1535A
VCEO
VALUE
V
-180
Open collector
-5
V
IC
Collector current
-1.0
A
ICM
Collector current-peak
-1.5
A
PC
Collectorl power dissipation
Ta=25
2.0
TC=25
15
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SA1535 2SA1535A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-emitter
breakdown voltage
2SA1535
CONDITIONS
IC=-1mA; IB=0
MIN
TYP.
MAX
UNIT
-150
V
IC=-0.1mA; IB=0
-180
Emitter-base breakdown voltage
IE=-10µA; IC=0
-5
VCEsat
Collector-emitter saturation voltage
IC=-0.5 A;IB=-50m A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-0.5 A;IB=-50m A
-2.0
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-10
µA
hFE-1
DC current gain
IC=-150mA ; VCE=-10V
90
hFE-2
DC current gain
IC=-500mA ; VCE=-5V
50
fT
Transition frequency
IC=-50mA ; VCB=-10V
200
MHz
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
30
pF
V(BR)EBO
2SA1535A
hFE-1 classifications
Q
R
S
90-155
130-220
185-330
2
V
330
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1535 2SA1535A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1535 2SA1535A
4