SavantIC Semiconductor Product Specification 2SB1075 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·High collector-peak current ·Low collector saturation voltage APPLICATIONS ·For audio frequency output amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -2 A ICM Collector current-Peak -4 A PD Total power dissipation 1.2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Ta=25 SavantIC Semiconductor Product Specification 2SB1075 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0 -40 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -50 V VCEsat Collector-emitter saturation voltage IC=-3.0A; IB=-0.3A* VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A* ICBO Collector cut-off current ICEO 2 -1.0 V 2 -1.5 V VCB=-50V; IE=0 -1 µA Collector cut-off current VCE=-10V; IE=0 -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE DC current gain IC=-1A ; VCE=-5V* Transition frequency IC=-0.5A ; VCE=-5V* 150 MHz Collector output capacitance IE=0; f=1MHz ; VCB=-20V 40 pF fT COB 2 50 2 2 Note: * pulse test hFE Classifications P Q R 50-100 80-160 120-220 2 220 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1075