SavantIC Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA1096/A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector- emitter voltage CONDITIONS Open emitter 2SC2497 Emitter-base voltage IC Collector current ICM Collector current-peak UNIT 70 V 50 Open base 2SC2497A VEBO VALUE V 60 Open collector 5 V 1.5 A 3 A 1 1.2* PD Total power dissipation TC=25 2 5* Tj Junction temperature 150 Tstg Storage temperature -55 +150 Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink W SavantIC Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SC2497 MIN TYP. MAX UNIT 50 IC=2mA ; IB=0 2SC2497A V 60 V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.15A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=0.15A 1.5 V ICEO Collector cut-off current VCE=10V; IB=0 100 µA ICBO Collector cut-off current VCB=20V; IE=0 1 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=1A ; VCE=5V COB Output capacitance IE=0 ; VCB=20V,f=1MHz 35 pF fT Transition frequency IE=0.5A ; VCB=5V,f=200MHz 150 MHz hFE Classifications R S 80-160 120-220 2 70 V 80 220 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC2497 2SC2497A