SavantIC Semiconductor Product Specification 2SC2979 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High VCBO ·Fast switching speed. APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 1.5 A PC Collector dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC2979 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; RBE=<,L=100mH V(BR)EBO Base-emitter breakdown voltage IE=10mA ; IC=0 VCEsat Collector-emitter saturation voltage IC=0.75A; IB=0.15A 1.0 V VBEsat Base-emitter saturation voltage IC=0.75A; IB=0.15A 1.5 V ICBO Collector cut-off current VCB=750V ;IE=0 100 µA ICEO Collector cut-off current VCE=650V; RBE=< 100 µA hFE-1 DC current gain IC=0.3A ; VCE=5V 15 hFE-2 DC current gain IC=1.5A ; VCE=5V 7 1.0 µs 3.0 µs 1.0 µs 800 V 7 V Switching times ton Turn-on time tstg Storage time tf VCCA250V; IC=1.5A IB1=0.3A;IB2=-0.75A Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC2979 SavantIC Semiconductor Product Specification 2SC2979 Silicon NPN Power Transistors 4