SAVANTIC 2SC2979

SavantIC Semiconductor
Product Specification
2SC2979
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High VCBO
·Fast switching speed.
APPLICATIONS
·For high voltage ,high speed and
high power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
3
A
ICM
Collector current-peak
6
A
IB
Base current
1.5
A
PC
Collector dissipation
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2979
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A; RBE=<,L=100mH
V(BR)EBO
Base-emitter breakdown voltage
IE=10mA ; IC=0
VCEsat
Collector-emitter saturation voltage
IC=0.75A; IB=0.15A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=0.75A; IB=0.15A
1.5
V
ICBO
Collector cut-off current
VCB=750V ;IE=0
100
µA
ICEO
Collector cut-off current
VCE=650V; RBE=<
100
µA
hFE-1
DC current gain
IC=0.3A ; VCE=5V
15
hFE-2
DC current gain
IC=1.5A ; VCE=5V
7
1.0
µs
3.0
µs
1.0
µs
800
V
7
V
Switching times
ton
Turn-on time
tstg
Storage time
tf
VCCA250V; IC=1.5A
IB1=0.3A;IB2=-0.75A
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC2979
SavantIC Semiconductor
Product Specification
2SC2979
Silicon NPN Power Transistors
4