SavantIC Semiconductor Product Specification 2SC3322 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·High voltage ·High speed APPLICATIONS ·High power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2.5 A PT Total power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3322 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,L=100mH;RBE=: V(BR)EBO Base-emitter breakdown voltage IE=10mA; IC=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBE sat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=750V; IE=0 100 µA ICEO Collector cut-off current VCE=650V; RBE=: 100 µA hFE-1 DC current gain IC=0.5A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 7 1.0 µs 3.0 µs 1.0 µs 800 V 7 V Switching times ton Turn-on time tstg Storage time tf IC=3A ; VCC@250V IB1=0.6A; IB2=-1.5A Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SC3322