SavantIC Semiconductor Product Specification 2SC3365 Silicon NPN Power Transistors DESCRIPTION With TO-3PN package ·High voltage ,high speed · APPLICATIONS ·For high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 10 A ICM Collector current-peak 20 A IB Base current 5 A PC Collector power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3365 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;RBE=:,L=100mH 400 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 50 µA ICEO Collector cut-off current VCE=350V; RBE=: 50 µA hFE-1 DC current gain IC=5A ; VCE=5V 12 hFE-2 DC current gain IC=10A ; VCE=5V 5 1.0 µs 2.5 µs 1.0 µs Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=10A; IB1=-IB2=2A VCC?150V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions(unindicated tolerance:±0.10 mm) 3 2SC3365 SavantIC Semiconductor Product Specification 2SC3365 Silicon NPN Power Transistors 4