SavantIC Semiconductor Product Specification 2SC4742 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector VALUE UNIT 1500 V 6 V IC Collector current 6 A ICM Collector current-peak 7 A IC(surge) Collector current-surge 16 A Io C to E diode forward current 7 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC4742 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=400mA ;IC=0 ICES Collector cut-off current VCE=1500V; RBE=0 0.5 hFE DC current gain IC=1A ; VCE=5V 25 VCE(sat) Collector-emitter saturation voltage IC=5A ; IB=1.25A 2.0 V VBE(sat) Base-emitter saturation voltage IC=5A ; IB=1.25A 1.5 V Diode forward voltage IF=6A 2.0 V Fall time ICP=5A; IB1=1A;IB2=-2A 0.4 µs VECF tf 2 6 UNIT V mA SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC4742 SavantIC Semiconductor Product Specification 2SC4742 Silicon NPN Power Transistors 4