ISC 2SC4663

Inchange Semiconductor
Product Specification
2SC4663
Silicon NPN Power Transistors
DESCRIPTION
・With ITO-220 package
・Switching power transistor
・Low collector saturation voltage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
VALUE
UNIT
250
V
200
V
7
V
Collector current
5
A
Collector current-Peak
10
A
Base current
2
A
IBM
Base current-Peak
4
A
PT
Total power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
5.0
℃/W
VCBO
VCEO
VEBO
IC
ICM
IB
PARAMETER
CONDITIONS
TOR
体
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
Emitter-base voltage
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
Inchange Semiconductor
Product Specification
2SC4663
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=2.5A; IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2.5A; IB=0.5A
1.5
V
At rated volatge
0.1
mA
0.1
mA
ICBO
CONDITIONS
MIN
IEBO
Emitter cut-off current
At rated volatge
hFE-1
DC current gain
IC=2.5A ; VCE=2V
10
DC current gain
IC=1mA ; VCE=2V
10
Transition frequency
IC=0.5A ; VCE=10V
ton
ts
tf
UNIT
V
Collector cut-off current
Collector cut-off current
fT
MAX
200
ICEO
hFE-2
TYP.
25
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Turn-on time
Storage time
IC=2.5A;IB1=0.5A
IB2=1A ,RL=60Ω
VBB2=4V
Fall time
2
13
MHz
0.3
μs
1.0
μs
0.1
μs
Inchange Semiconductor
Product Specification
2SC4663
Silicon NPN Power Transistors
PACKAGE OUTLINE
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3