Inchange Semiconductor Product Specification 2SC4663 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor ・Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VALUE UNIT 250 V 200 V 7 V Collector current 5 A Collector current-Peak 10 A Base current 2 A IBM Base current-Peak 4 A PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 5.0 ℃/W VCBO VCEO VEBO IC ICM IB PARAMETER CONDITIONS TOR 体 U 导 D 半 N O C 固电 I EM S E G N A INCH Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification 2SC4663 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V At rated volatge 0.1 mA 0.1 mA ICBO CONDITIONS MIN IEBO Emitter cut-off current At rated volatge hFE-1 DC current gain IC=2.5A ; VCE=2V 10 DC current gain IC=1mA ; VCE=2V 10 Transition frequency IC=0.5A ; VCE=10V ton ts tf UNIT V Collector cut-off current Collector cut-off current fT MAX 200 ICEO hFE-2 TYP. 25 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Turn-on time Storage time IC=2.5A;IB1=0.5A IB2=1A ,RL=60Ω VBB2=4V Fall time 2 13 MHz 0.3 μs 1.0 μs 0.1 μs Inchange Semiconductor Product Specification 2SC4663 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3