SavantIC Semiconductor Product Specification 2SD1163,2SD1163A Silicon NPN Power Transistors DESCRIPTION h TO-220 package ·Low collector saturation voltage ·Wit APPLICATIONS ·TV horizontal deflection output, PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SD1163 VCBO 120 Open base 2SD1163A VEBO Emitter-base voltage V 350 2SD1163 Collector-emitter voltage UNIT 300 Open emitter Collector-base voltage 2SD1163A VCEO VALUE V 150 Open collector 6 V IC Collector current 7 A ICM Collector current-peak 10 A IC(surge) Collector current-surge 20 A 40 W PC Collector power dissipation TC=25 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1163,2SD1163A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO hFE PARAMETER Collector-emitter breakdown voltage 2SD1163 DC current gain TYP MAX UNIT 120 2SD1163A V 150 IE=10mA ;IC=0 6 2SD1163 V 2.0 IC=5A, IB=0.5A V 1.0 2SD1163A Base-emitter saturation voltage Collector cut-offcurrent MIN IC=10mA ;RBE=: Emitter-base breakdown voltage Collector-emitter saturation voltage CONDITIONS IC=5A, IB=0.5A 1.2 V 2SD1163 VCB=300V;IE=0 5 mA 2SD1163A VCB=350V;IE=0 5 mA 0.5 µs IC=5A ; VCE=5V 25 Switching times tf Fall time ICM=3.5A;IB1 =0.45A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3