SavantIC Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SD1267 VCBO Collector-base voltage 60 Open base 2SD1267A VEBO Emitter-base voltage V 80 2SD1267 Collector-emitter voltage UNIT 60 Open emitter 2SD1267A VCEO VALUE V 80 Open collector 5 V IC Collector current 4 A ICM Collector current-peak 8 A PC Collector power dissipation Ta=25 2 TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD1267 MIN TYP. MAX UNIT 60 V IC=30mA ,IB=0 80 2SD1267A Collector-emitter saturation voltage IC=4A, IB=0.4A 1.5 V VBE Base-emitter voltage IC=3A ; VCE=4V 2.0 V IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA ICEO Collector cut-off current 0.7 mA 0.4 mA ICES Collector cut-off current 2SD1267 VCE=30V; IB=0 2SD1267A VCE=60V; IB=0 2SD1267 VCE=60V; VBE=0 2SD1267A VCE=80V; VBE=0 hFE-1 DC current gain IC=1A ; VCE=4V 70 hFE-2 DC current gain IC=3A ; VCE=4V 15 Transition frequency IC=0.5A; VCE=5V,f=1MHz fT 250 20 MHz 0.4 µs 1.5 µs 0.5 µs Switching times ton Turn-on time tstg Storage time tf IC=4A;IB1=-IB2=0.4A VCC=50V Fall time hFE-1 Classifications Q P 70-150 120-250 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1267 2SD1267A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 SavantIC Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors 4