SAVANTIC 2SB1052

SavantIC Semiconductor
Product Specification
2SB1052
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SD1480
·Low collector saturation voltage
APPLICATIONS
·For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector -emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-2
A
ICM
Collector current-peak
-4
A
PC
Collector power dissipation
Ta=25
2.0
TC=25
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1052
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-30mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A ;IB=-0.2A
-2.0
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-4V
-1.2
V
ICES
Collector cut-off current
VCE=-60V; VBE=0
-0.2
mA
ICEO
Collector cut-off current
VCE=-30V; IB=0
-0.3
mA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-0.1A ; VCE=-4V
35
hFE-2
DC current gain
IC=-1A ; VCE=-4V
40
-60
UNIT
V
250
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-1A ;IB1=-IB2=-0.1A
Fall time
hFE-2 Classifications
R
Q
P
40-90
70-150
120-250
2
0.1
µs
1.5
µs
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
2SB1052