Inchange Semiconductor Product Specification 2SD1830 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1228 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICM Collector current-peak 12 A PC Collector dissipation TC=25℃ 20 W 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1830 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 110 V V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=∞ 100 V VCEsat Collector-emitter saturation voltage IC=4A ; IB=8mA VBEsat Base-emitter saturation voltage ICBO 1.5 V IC=4A ; IB=8mA 2.0 V Collector cut-off current VCB=80V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V;IC=0 3.0 mA hFE DC current gain IC=4A ; VCE=3V Transition frequency IC=4A ; VCE=5V fT 0.9 1500 4000 20 MHz 0.6 μs 4.8 μs 1.6 μs Switching times ton Turn-on time tstg Storage time tf IC=500IB1=-500IB2=4A VCC=50V ,RL=12.5Ω Fall time 2 Inchange Semiconductor Product Specification 2SD1830 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3