SAVANTIC 2SD1895

SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD1895
DESCRIPTION
·With TO-3PFa package
·High DC current gain
·Low collector saturation voltage
·Complement to type 2SB1255
APPLICATIONS
·Power amplification
·Optimum for 90W high-fidelity
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
160
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
15
A
ICP
Collector current-peak
8
A
PC
Collector power dissipation
TC=25
100
W
3
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1895
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=7A ;IB=7mA
2.5
V
VBEsat
Base-emitter saturation voltage
IC=7A ;IB=7mA
3.0
V
ICBO
Collector cut-off current
VCB=160V; IE=0
100
µA
ICEO
Collector cut-off current
VCE=140V; IB=0
100
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
µA
hFE-1
DC current gain
IC=1A ; VCE=5V
2000
hFE -2
DC current gain
IC=7A ; VCE=5V
5000
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
fT
CONDITIONS
MIN
TYP.
MAX
140
UNIT
V
30000
20
MHz
2.0
µs
6.0
µs
1.2
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=7A; VCC=50V
IB1=-IB2=7mA
Fall time
hFE-2 classifications
Q
P
5000-15000
8000-30000
2
SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
2SD1895