SavantIC Semiconductor Product Specification 2SD2017 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·DARLINGTON APPLICATIONS ·Driver for solenoid,relay and motor and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 20 V IC Collector current 6 A IB Base current 1 A PC Collector dissipation 35 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD2017 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=2mA 1.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=2mA 2.0 V ICBO Collector cut-off current VCB=300V; IE=0 100 µA IEBO Emitter cut-off current VEB=20V; IC=0 10 mA hFE DC current gain IC=2A ; VCE=2V Transition frequency IE=-1A ; VCE=12V 20 MHz Collector output capacitance f=1MHz;VCB=10V 65 pF 0.6 µs 16.0 µs 3.0 µs fT COB CONDITIONS MIN TYP. MAX 250 UNIT V 2000 Switching times ton Turn-on time ts Storage time tf Fall time IC=2.0A ;IB1=5mA;IB2=-10mA VCC=100V ,RL=50@ 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD2017