SAVANTIC 2SD2017

SavantIC Semiconductor
Product Specification
2SD2017
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·DARLINGTON
APPLICATIONS
·Driver for solenoid,relay and motor
and general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
250
V
VEBO
Emitter-base voltage
Open collector
20
V
IC
Collector current
6
A
IB
Base current
1
A
PC
Collector dissipation
35
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD2017
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=2mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=2mA
2.0
V
ICBO
Collector cut-off current
VCB=300V; IE=0
100
µA
IEBO
Emitter cut-off current
VEB=20V; IC=0
10
mA
hFE
DC current gain
IC=2A ; VCE=2V
Transition frequency
IE=-1A ; VCE=12V
20
MHz
Collector output capacitance
f=1MHz;VCB=10V
65
pF
0.6
µs
16.0
µs
3.0
µs
fT
COB
CONDITIONS
MIN
TYP.
MAX
250
UNIT
V
2000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.0A ;IB1=5mA;IB2=-10mA
VCC=100V ,RL=50@
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD2017