UniFETTM FDB12N50F tm N-Channel MOSFET, FRFET 500V, 11.5A, 0.7Ω Features Description • RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant D D G S G D2-PAK TO-263AB S FDB Series MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage -Continuous (TC = 25oC) Ratings 500 Units V ±30 V 11.5 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 11.5 A EAR Repetitive Avalanche Energy (Note 1) 16.5 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns -Continuous (TC = 100oC) - Pulsed PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) 46 A (Note 2) 456 mJ (Note 3) (TC = 25oC) - Derate above 25oC A 6.9 165 W 1.33 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.75 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2007 Fairchild Semiconductor Corporation FDB12N50F Rev. A 1 Units o C/W www.fairchildsemi.com FDB12N50F N-Channel MOSFET November 2007 Device Marking FDB12N50F Device FDB12N50FTM_WS Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units 500 - - V - 0.5 - V/oC Off Characteristics BVDSS ∆BVDSS / ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 500V, VGS = 0V - - 10 VDS = 400V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.59 0.7 Ω - 12 - S - 1050 1395 pF - 135 180 pF - 11 17 pF - 21 30 nC - 6 - nC - 9 - nC µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 6A gFS Forward Transconductance VDS = 40V, ID = 6A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 11.5A VGS = 10V (Note 4, 5) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 11.5A RG = 25Ω (Note 4, 5) - 21 50 ns - 45 100 ns - 50 110 ns - 35 80 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 11.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 46 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 11.5A - - 1.5 V trr Reverse Recovery Time 134 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 11.5A dIF/dt = 100A/µs - 0.37 - µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 11.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB12N50F Rev. A 2 www.fairchildsemi.com FDB12N50F N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted FDB12N50F N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 30 ID,Drain Current[A] 10 ID,Drain Current[A] VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 1 o 25 C *Notes: 1. 250µs Pulse Test 0.1 * Notes : 1. VDS = 20V 2. 250µs Pulse Test o 0.05 0.1 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 1 20 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS,Gate-Source Voltage[V] IS, Reverse Drain Current [A] 100 0.8 0.7 VGS = 10V VGS = 20V 0.6 o 150 C 10 o 25 C Notes: 1. VGS = 0V o 0.5 * Note : TJ = 25 C 0 6 12 ID, Drain Current [A] 1 0.0 18 2. 250µs Pulse Test 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 2.0 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 2000 10 1500 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Coss Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.9 RDS(on) [Ω], Drain-Source On-Resistance o 150 C * Note: 1. VGS = 0V 2. f = 1MHz 1000 500 Crss 0 0.1 FDB12N50F Rev. A 1 10 VDS, Drain-Source Voltage [V] 8 6 4 2 0 30 3 VDS = 100V VDS = 250V VDS = 400V * Note : ID = 11.5A 0 4 8 12 16 Qg, Total Gate Charge [nC] 20 24 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 100 20µs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 10 1ms 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 0.9 -50 0 50 100 150 o TJ, Junction Temperature [ C] o 1. TC = 25 C * Notes : 1. VGS = 0V 2. ID = 250µA 0.8 -100 100µs o 0.01 200 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 10. Maximum Drain Current vs. Case Temperature 12 ID, Drain Current [A] 10 8 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 t1 0.02 0.01 0.01 t2 *Notes: o 1. ZθJC(t) = 0.75 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 -5 10 FDB12N50F Rev. A PDM 0.05 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDB12N50F N-Channel MOSFET Typical Performance Characteristics (Continued) FDB12N50F N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB12N50F Rev. A 5 www.fairchildsemi.com FDB12N50F N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDB12N50F Rev. A 6 www.fairchildsemi.com FDB12N50F N-Channel MOSFET Mechanical Dimensions Dimensions in Millimeters FDB12N50F Rev. A 7 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 FDB12N50F Rev. A 8 www.fairchildsemi.com FDB12N50F N-Channel MOSFET TRADEMARKS