SAVANTIC BD135

SavantIC Semiconductor
Product Specification
BD135 BD137 BD139
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·High current
·Complement to type BD136/138/140
APPLICATIONS
·Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD135
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
BD137
Open emitter
Emitter -base voltage
IC
60
BD139
100
BD135
45
BD137
UNIT
45
Open base
BD139
VEBO
VALUE
60
V
V
100
Open collector
5
V
Collector current (DC)
1.5
A
ICM
Collector current-Peak
2
A
IBM
Base current-Peak
1
A
Pt
Total power dissipation
8
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
Tamb
Operating ambient temperature
-65~150
Tmb670
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
Thermal resistance from junction to ambient
100
K/W
Rth j-mb
Thermal resistance from junction to mounting base
10
K/W
SavantIC Semiconductor
Product Specification
BD135 BD137 BD139
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEsat
VBE
ICBO
PARAMETER
CONDITIONS
MIN
MAX
UNIT
Collector-emitter saturation voltage
IC=0.5A; IB=50mA
0.5
V
Base-emitter voltage
IC=500mA ; VCE=2V
1.0
V
VCB=30V; IE=0
100
nA
VCB=30V; IE=0 Tj=125
10
µA
100
nA
Collector cut-off current
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=5mA ; VCE=2V
40
hFE-2
DC current gain
BD135-10;BD137-10;BD139-10
BD135-16;BD137-16;BD139-16
IC=150mA ; VCE=2V
63
63
100
hFE-3
DC current gain
IC=500mA ; VCE=2V
25
Transition frequency
IC=50mA; VCE=5V ;f=100MHz
fT
TYP.
2
250
160
250
190
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BD135 BD137 BD139