SavantIC Semiconductor Product Specification BD230 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type BD231 ·High current (Max:1.5A) ·Low voltage (Max: 80V) APPLICATIONS ·Drive stage in TV circuits PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 1.5 A ICM Collector current-Peak 3 A IBM Base current-Peak 1 A PD Total power dissipation Tmb462 12.5 TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -65~150 Tamb Operating ambient temperature -65~150 SavantIC Semiconductor Product Specification BD230 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.8 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.2 V VBE Base-emitter on voltage IC=1A ; VCE=2V 1.3 V ICBO Collector cut-off current VCB=30V; IE=0 0.1 µA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 µA hFE-1 DC current gain IC=5mA ; VCE=2V 40 hFE-2 DC current gain IC=150mA ; VCE=2V 40 hFE-3 DC current gain IC=1A ; VCE=2V 25 Transition frequency IC=50mA ; VCE=5V fT 2 250 125 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD230