JMNIC 2SA738

JMnic
Product Specification
2SA738
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・High current
・Complement to type 2SC1368
APPLICATIONS
・Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-25
V
VCEO
Collector-emitter voltage
Open base
-25
V
VEBO
Emitter -base voltage
Open collector
-5
V
IC
Collector current
-1.5
A
ICM
Collector current-Peak
-2.0
A
Pt
Total power dissipation
8
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
JMnic
Product Specification
2SA738
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-0.5A; IB=-50mA
-0.5
V
VBE
Base-emitter voltage
IC=-500mA ; VCE=-2V
-1.0
V
ICBO
Collector cut-off current
VCB=-25V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
μA
hFE-1
DC current gain
IC=-150mA ; VCE=-2V
35
hFE-2
DC current gain
IC=-500mA ; VCE=-2V
25
Transition frequency
IC=-50mA; VCE=-5V
fT
CONDITIONS
2
MIN
TYP.
MAX
-25
UNIT
V
320
160
MHz
JMnic
Product Specification
2SA738
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3