JMnic Product Specification 2SA738 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・High current ・Complement to type 2SC1368 APPLICATIONS ・Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -25 V VCEO Collector-emitter voltage Open base -25 V VEBO Emitter -base voltage Open collector -5 V IC Collector current -1.5 A ICM Collector current-Peak -2.0 A Pt Total power dissipation 8 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ JMnic Product Specification 2SA738 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -0.5 V VBE Base-emitter voltage IC=-500mA ; VCE=-2V -1.0 V ICBO Collector cut-off current VCB=-25V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE-1 DC current gain IC=-150mA ; VCE=-2V 35 hFE-2 DC current gain IC=-500mA ; VCE=-2V 25 Transition frequency IC=-50mA; VCE=-5V fT CONDITIONS 2 MIN TYP. MAX -25 UNIT V 320 160 MHz JMnic Product Specification 2SA738 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3