ISC BD231

Inchange Semiconductor
Product Specification
BD231
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type BD230
・High current (Max:-1.5A)
・Low voltage (Max: -80V)
APPLICATIONS
・Drive stage in TV circuits
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-1.5
A
ICM
Collector current-Peak
-3
A
IBM
Base current-Peak
-1
A
PD
Total power dissipation
Tmb≤62℃
12.5
W
PD
Total power dissipation
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Tamb
Operating ambient temperature
-65~150
℃
Inchange Semiconductor
Product Specification
BD231
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-0.8
V
VBEsat
Base-emitter saturation voltage
IC=-1A; IB=-0.1A
-1.1
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-2V
-1.3
V
ICBO
Collector cut-off current
VCB=-30V; IE=0
-0.1
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
μA
hFE-1
DC current gain
IC=-5mA ; VCE=-2V
40
hFE-2
DC current gain
IC=-150mA ; VCE=-2V
40
hFE-3
DC current gain
IC=-1A ; VCE=-2V
25
Transition frequency
IC=-50mA ; VCE=-5V
fT
2
250
50
MHz
Inchange Semiconductor
Product Specification
BD231
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3