Inchange Semiconductor Product Specification BD231 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD230 ・High current (Max:-1.5A) ・Low voltage (Max: -80V) APPLICATIONS ・Drive stage in TV circuits PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -1.5 A ICM Collector current-Peak -3 A IBM Base current-Peak -1 A PD Total power dissipation Tmb≤62℃ 12.5 W PD Total power dissipation TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Tamb Operating ambient temperature -65~150 ℃ Inchange Semiconductor Product Specification BD231 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.8 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -1.1 V VBE Base-emitter on voltage IC=-1A ; VCE=-2V -1.3 V ICBO Collector cut-off current VCB=-30V; IE=0 -0.1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 μA hFE-1 DC current gain IC=-5mA ; VCE=-2V 40 hFE-2 DC current gain IC=-150mA ; VCE=-2V 40 hFE-3 DC current gain IC=-1A ; VCE=-2V 25 Transition frequency IC=-50mA ; VCE=-5V fT 2 250 50 MHz Inchange Semiconductor Product Specification BD231 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3