SAVANTIC TIP31

SavantIC Semiconductor
Product Specification
TIP31/31A/31B/31C
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type TIP32/32A/32B/32C
APPLICATIONS
·Medium power linear switching
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
TIP31
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
TIP31A
VALUE
40
Open emitter
60
TIP31B
80
TIP31C
100
TIP31
40
TIP31A
UNIT
Open base
60
TIP31B
80
TIP31C
100
Open collector
V
V
5
V
Collector current (DC)
3
A
ICM
Collector current-Pulse
5
A
IB
Base current
1
A
PC
Collector power dissipation
TC=25
40
Ta=25
2
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
w
SavantIC Semiconductor
Product Specification
TIP31/31A/31B/31C
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(sat)
VBE
ICES
ICEO
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
MIN
TIP31
40
TIP31A
60
MAX
IC=30mA; IB=0
UNIT
V
TIP31B
80
TIP31C
100
Collector-emitter saturation voltage
IC=3A IB=0.375A
1.2
V
Base-emitter on voltage
IC=3A ; VCE=4V
1.8
V
0.2
mA
0.3
mA
1.0
mA
Collector
cut-off current
Collector
cut-off current
TIP31
VCE=40V; VEB=0
TIP31A
VCE=60V; VEB=0
TIP31B
VCE=80V; VEB=0
TIP31C
VCE=100V; VEB=0
TIP31/31A
VCE=30V; IB=0
TIP31B/31C
VCE=60V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
25
hFE-2
DC current gain
IC=3A ; VCE=4V
10
Transition frequency
IC=0.5A ; VCE=10V
3
fT
TYP.
2
50
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
TIP31/31A/31B/31C
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
TIP31/31A/31B/31C
Silicon NPN Power Transistors
4