Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD234 /236 /238 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 半导 Absolute maximum ratings (Ta=25℃) SYMBOL 固电 VCBO PARAMETER Collector-base voltage D N O IC BD233 M E S GE BD235 N A H INC Open emitter BD237 BD233 VCEO Collector-emitter voltage BD235 Open base BD237 VEBO Emitter -base voltage IC R O T UC CONDITIONS VALUE UNIT 45 60 V 100 45 60 V 80 Open collector 5 V Collector current (DC) 2 A ICM Collector current-Peak 6 A PC Collector power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage Base-emitter on voltage VBE CONDITIONS MAX UNIT IC=1A; IB=0.1A 0.6 V IC=1A ; VCE=2V 1.3 V BD233 VCEO(SUS) Collector-emitter sustaining voltage BD235 Collector cut-off current IC=0.1A; IB=0 IEBO BD235 VCB=60V; IE=0 固 Emitter cut-off current hFE-1 DC current gain hFE-2 DC current gain fT 100 VCB=100V; IE=0 IC=150mA ; VCE=2V 40 IC=1A ; VCE=2V 25 IC=250mA; VCE=10V 3 2 R O T UC D N O IC VEB=5V; IC=0 M E S GE N A H INC Transition frequency 80 VCB=45V; IE=0 导体 半 电 V 60 BD233 BD237 TYP. 45 BD237 ICBO MIN 1 μA mA MHz Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3