SavantIC Semiconductor Product Specification BU1706AX Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For use in high frequency electronic lighting ballast applications. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1750 V VCEO Collector-emitter voltage Open base 850 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current 5 A ICM Collector current (peak) 8 A IB Base current 3 A IBM Base current (peak) 5 A PT Total power dissipation 32 W Tj Junction temperature 150 Tstg Storage temperature -40~150 TC=25 SavantIC Semiconductor Product Specification BU1706AX Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) TYP. MAX UNIT Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH 750 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.3 V ICES Collector cut-off current VCE=rated;VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=12V; IC=0 1.0 mA hFE-1 DC current gain IC=5mA ; VCE=10V 8 hFE-2 DC current gain IC=0.4A ; VCE=3V 12 18 hFE-3 DC current gain IC=1.5A ; VCE=1V 5 7 V 35 Switching times ton Turn-on time ts Storage time tf Fall time IC=1.5A ;IB1=-IB2=0.3A 2 1.1 1.5 µs 5.0 6.5 µs 0.75 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU1706AX