SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R DESCRIPTION ·With TO-3 package ·DARLINGTON APPLICATIONS ·Automotive ignition applications ·Inverters circuits for motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BU931R VCBO Collector-base voltage 450 Open base BU932R VEBO Emitter-base voltage V 450 BU931R Collector-emitter voltage UNIT 400 Open emitter BU932R VCEO VALUE V 500 Open collector 5 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 1 A IBM Base current-peak 5 A PT Total power dissipation 175 W Tj Junction temperature 200 Tstg Storage temperature -40~200 TC125 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO PARAMETER Collector-emitter sustaining voltage CONDITIONS BU931R VCEsat-2 Collector-emitter saturation voltage BU932R IC=8A; IB=150mA VBEsat-1 Base-emitter saturation voltage ICES Collector cut-off current IC=10A; IB=250mA BU931R IC=8A; IB=100mA BU932R IC=8A; IB=150mA Base-emitter saturation voltage Only for BU931R BU931R V IC=7A; IB=70mA IC=8A; IB=100mA Collector-emitter saturation Voltage Only for BU931R UNIT 450 BU931R VCEsat-3 Collector cut-off current MAX 400 BU932R Collector-emitter saturation Voltage Only for BU931R ICEO TYP. IC=100mA ; IB=0 VCEsat-1 VBEsat-2 MIN IC=10A; IB=250mA 1.6 V 1.8 V 1.8 V 2.2 V 2.5 V 1.0 mA VCE=400V ;IB=0 BU932R VCE=450V ;IB=0 BU931R VCE=400V ;VBE=0 TC=125 1.0 5.0 BU932R VCE=450V ;VBE=0 TC=125 1.0 5.0 50 mA 2.8 V IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=5A ; VCE=10V VF Diode forward voltage IF=10A mA 300 Switching times ts Storage time tf Fall time IC=7A ;IB=70mA ;VBE=0;RBE=47@ VCC=12V,Vclamp=300V;L=7mH 2 15 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU931R BU932R