SavantIC Semiconductor Product Specification BU931 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions. ·High voltage ignition coil driver PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 1 A IBM Base current (peak) 5 A PT Total power dissipation 175 W Tj Junction temperature -65~200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification BU931 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=10mH 400 VCEsat-1 Collector-emitter saturation voltage IC=7A;IB=70mA 1.6 V VCEsat-2 Collector-emitter saturation voltage IC=8 A;IB=100mA 1.8 V VCEsat-3 Collector-emitter saturation voltage IC=10 A;IB=250mA 1.8 V VBEsat-1 Base-emitter saturation voltage IC=7A;IB=70mA 2.2 V VBEsat-2 Base-emitter saturation voltage IC=8 A;IB=100mA 2.4 V VBEsat-3 Base-emitter saturation voltage IC=10A;IB=250mA 2.5 V ICES Collector cut-off current VCE=500V;VBE=0 Tj=125 0.1 0.5 mA ICEO Collector cut-off current VCE=450V;IB=0 Tj=125 0.1 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 20 mA hFE DC current gain IC=5A ; VCE=10V VF Diode forward voltage IF=10A 2.5 V 2 TYP. MAX UNIT V 300 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU931