Inchange Semiconductor Product Specification MJ10012 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage,high current ・DARLINGTON APPLICATIONS ・Automotive ignition ・Switching regulator ・Motor control applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Abolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 2 A PC Collector power dissipation 175 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification MJ10012 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 400 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 V VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A 2.0 V VCEsat-3 Collector-emitter saturation voltage IC=10A; IB=2A 2.5 V VBEsat-1 Base-emitter saturation voltage IC=6A; IB=0.6A 2.5 V VBEsat-2 Base-emitter saturation voltage IC=10A; IB=2A 3.0 V VBE Base-emitter on voltage IC=10A ; VCE=6V 2.8 V ICBO Collector cut-off current VCB=600V; IE=0 1 mA ICEO Collector cut-off current VCE=400V; IB=0 1 mA IEBO Emitter cut-off current VEB=6V; IC=0 40 mA hFE-1 DC current gain IC=3A ; VCE=6V 300 hFE-2 DC current gain IC=6A ; VCE=6V 100 hFE-3 DC current gain IC=10A ; VCE=6V 20 VF Diode forward voltage IF=10A ts Storage time tf Fall time 2000 3.5 V 15 μs 15 μs IC=6.0A ; VCC=12V IB1=IB2=0.3A 2 Inchange Semiconductor Product Specification MJ10012 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3