SAVANTIC BUH715AF

SavantIC Semiconductor
Product Specification
BUH715AF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage,high speed
APPLICATIONS
·Horizontal deflection for monitors.
·Switching mode power supplies
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
10
A
ICM
Collector current (Pulse)
20
A
IB
Base current (DC)
5
A
IBM
Base current (Pulse)
10
A
Ptot
Total power dissipation
57
W
Tj
Tstg
TC=25
Operating junction temperature
150
Storage temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
MAX
2.2
UNIT
/W
SavantIC Semiconductor
Product Specification
BUH715AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
700
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=7A ;IB=1.5A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=7A ;IB=1.5A
1.3
V
ICES
Collector cut-off current
VCE=1500V; VBE=0
Tj=125
1
2
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
µA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
hFE-2
DC current gain
IC=7A ; VCE=5V
8
16
Switching times
ts
Storage time
tf
Fall time
2.1
3.1
µs
140
210
ns
IC=7A;IB1=1.5A;IB2=3.5A;
VCC=400V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.30mm)
3
BUH715AF