SAVANTIC BUJ403A

SavantIC Semiconductor
Product Specification
BUJ403A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High voltage,high speed
APPLICATIONS
·Designed for use in high frequency
electronic lighting ballast applications,
converters,inverters,switching regulators,
motor control systems,etc
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1200
V
VCEO
Collector-emitter voltage
Open base
550
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
6
A
ICM
Collector current-peak
10
A
IB
Base current
3
A
IBM
Base current-peak
5
A
Ptot
Total power dissipation
100
W
Tj
Tstg
Tmb125
Max.operating junction temperature
Storage temperature
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance junction mounting base
MAX
UNIT
1.25
K/W
SavantIC Semiconductor
Product Specification
BUJ403A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
TYP.
MAX
UNIT
Collector-emitter sustaining voltage
IC=10mA ;IB=0;L=25mH
550
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.4 A
0.15
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.4 A
0.91
1.5
V
ICEO
Collector cut-off current
VCE =550V; IB=0;
0.1
mA
ICES
Collector cut-off current
VCE =VCESMmax; VBE=0;
Tj=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1mA;VCE=5V
13
hFE-2
DC current gain
IC=500mA;VCE=5V
20
47
hFEsat-1
DC current gain
IC=2A;VCE=5V
13
25
hFEsat-2
DC current gain
IC=3A;VCE=5V
V
15.5
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.5A; IB1=-IB2=0.5 A
RL=75D,VBB2=4V
2
0.5
µs
3.0
µs
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3
BUJ403A