SavantIC Semiconductor Product Specification BUJ403A Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage,high speed APPLICATIONS ·Designed for use in high frequency electronic lighting ballast applications, converters,inverters,switching regulators, motor control systems,etc PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 550 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-peak 10 A IB Base current 3 A IBM Base current-peak 5 A Ptot Total power dissipation 100 W Tj Tstg Tmb125 Max.operating junction temperature Storage temperature 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance junction mounting base MAX UNIT 1.25 K/W SavantIC Semiconductor Product Specification BUJ403A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) TYP. MAX UNIT Collector-emitter sustaining voltage IC=10mA ;IB=0;L=25mH 550 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4 A 0.15 1.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4 A 0.91 1.5 V ICEO Collector cut-off current VCE =550V; IB=0; 0.1 mA ICES Collector cut-off current VCE =VCESMmax; VBE=0; Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=1mA;VCE=5V 13 hFE-2 DC current gain IC=500mA;VCE=5V 20 47 hFEsat-1 DC current gain IC=2A;VCE=5V 13 25 hFEsat-2 DC current gain IC=3A;VCE=5V V 15.5 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=2.5A; IB1=-IB2=0.5 A RL=75D,VBB2=4V 2 0.5 µs 3.0 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 BUJ403A