SavantIC Semiconductor Product Specification BUW11 BUW11A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS BUW11 BUW11A BUW11 BUW11A Open emitter Open base Open collector VALUE 850 1000 400 450 UNIT V V 9 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A IBM Base current-peak 4 A PT Total power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base MAX UNIT 1.25 K/W SavantIC Semiconductor Product Specification BUW11 BUW11A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS BUW11 MIN TYP. MAX 400 V IC=0.1A ; IB=0; L=25mH 450 BUW11A BUW11 UNIT IC=3A; IB=0.6A BUW11A IC=2.5A; IB=0.5A BUW11 IC=3A; IB=0.6A BUW11A IC=2.5A; IB=0.5A 1.5 V 1.4 V ICES Collector cut-off current VCE=Rated VCES; VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=5mA ; VCE=5V 10 35 hFE-2 DC current gain IC=0.5A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time ts Storage time tf Fall time For BUW11F IC=3A ;IB1=-IB2=0.6A For BUW11AF IC=2.5A ;IB1=-IB2=0.5A 2 1.0 µs 4.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUW11 BUW11A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3