ISC BUT12AX

Inchange Semiconductor
Product Specification
BUT12AX
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220F package
・High voltage ,high speed
APPLICATIONS
・Converters
・Inverters
・Switching regulators
・Motor control systems
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current
8
A
ICM
Collector current-peak
20
A
IB
Base current
4
A
IBM
Base current-peak
6
A
Ptot
Total power dissipation
23
W
TC=25℃
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
55
K/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
Thermal resistance from junction to ambient
Inchange Semiconductor
Product Specification
BUT12AX
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0;L=25mH
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
1.5
V
ICES
Collector cut-off current
VCE=Rated VCES ;VBE=0
Tj=125℃
1.0
3.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
10
mA
hFE-1
DC current gain
IC=10mA ; VCE=5V
10
35
hFE-2
DC current gain
IC=1A ; VCE=5V
10
35
450
UNIT
V
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A; IB1=-IB2=1A
2
1.0
μs
4.0
μs
0.8
μs
Inchange Semiconductor
Product Specification
BUT12AX
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3