Inchange Semiconductor Product Specification BUT12AX Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220F package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 8 A ICM Collector current-peak 20 A IB Base current 4 A IBM Base current-peak 6 A Ptot Total power dissipation 23 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 55 K/W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient Inchange Semiconductor Product Specification BUT12AX Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.5 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICES Collector cut-off current VCE=Rated VCES ;VBE=0 Tj=125℃ 1.0 3.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=10mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1A ; VCE=5V 10 35 450 UNIT V Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=5A; IB1=-IB2=1A 2 1.0 μs 4.0 μs 0.8 μs Inchange Semiconductor Product Specification BUT12AX Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3