SAVANTIC BUT12AF

SavantIC Semiconductor
Product Specification
BUT12F BUT12AF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
BUT12F
BUT12AF
BUT12F
BUT12AF
Open emitter
Open base
Open collector
VALUE
850
1000
400
450
UNIT
V
V
9
V
IC
Collector current
8
A
ICM
Collector current-peak
20
A
IB
Base current
4
A
IBM
Base current-peak
6
A
Ptot
Total power dissipation
23
W
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
Thermal resistance from junction to ambient
VALUE
UNIT
55
K/W
SavantIC Semiconductor
Product Specification
BUT12F BUT12AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICES
PARAMETER
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Collector
cut-off current
CONDITIONS
BUT12F
MIN
TYP.
MAX
400
IC=0.1A; IB=0;L=25mH
V
450
BUT12AF
BUT12F
UNIT
IC=6A; IB=1.2A
BUT12AF
IC=5A; IB=1A
BUT12F
IC=6A; IB=1.2A
1.5
V
1.5
V
BUT12AF
IC=5A; IB=1A
BUT12F
VCE=850V ;VBE=0
Tj=125
1.0
3.0
BUT12AF
VCE=1000V ;VBE=0
Tj=125
1.0
3.0
10
IEBO
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=10mA ; VCE=5V
10
35
hFE-2
DC current gain
IC=1A ; VCE=5V
10
35
mA
mA
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
For BUT12F
IC=6A;IB1=-IB2=1.2A;VCC=250V
For BUT12AF
IC=5A;IB1=-IB2=1A;VCC=250V
2
1.0
µs
4.0
µs
0.8
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT12F BUT12AF
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3