SavantIC Semiconductor Product Specification BUX47A Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Intended for high voltage,fast switching applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 9 A ICM Collector current-peak 15 A IB Bast current 8 A IBM Bast current-peak 10 A PT Total power dissipation 125 W Tj Junction temperature 175 Tstg Storage temperature -65~175 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.2 UNIT /W SavantIC Semiconductor Product Specification BUX47A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0; 450 V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0; 7 VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=1 A VCEsat-2 Collector-emitter saturation voltage IC=8A;IB=2.5A Base-emitter saturation voltage ICEV TYP. MAX UNIT V 30 V 1.5 V 3 V IC=5A;IB=1 A 1.6 V Collector cut-off current VCE=850V;VBE=-2.5V TC=125 0.15 1.5 mA IEBO Emitter cut-off current VEB=5V;IC=0 1 mA hFE DC current gain IC=1A ;VCE=5V VBEsat 15 50 Switching times Ton Turn-on time ts Storage time tf Fall time IC=5A;IB1=-IB2=1A; VCC=150V 2 0.7 µs 3 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUX47A