SavantIC Semiconductor Product Specification BUX48C Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ·Fast switching speed APPLICATIONS ·Linear and switching industrial equipment. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-peak (tp<5ms) 30 A IB Bast current 4 A IBM Bast current-peak 20 A PT Total power dissipation 175 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification BUX48C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0; 700 V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0; 7 VCEsat-1 Collector-emitter saturation voltage VCEsat-2 TYP. MAX UNIT V 30 V IC=6A;IB=1.5A 1.5 V Collector-emitter saturation voltage IC=10A;IB=4A 3 V VBEsat-1 Base-emitter saturation voltage IC=6A;IB=1.5A 1.5 V VBEsat-2 Base-emitter saturation voltage IC=10A;IB=4A 2 V ICES Collector cut-off current VCE=1200V;VBE=-0 TC=125 0.5 3.0 mA ICEO Collector cut-off current VCE=700V;IB=0 1 mA IEBO Emitter cut-off current VEB=6V;IC=0 1 mA hFE DC current gain IC=1A ;VCE=5V 15 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=6A;IB1=-IB2=1.5A; VCC=250V 2 0.5 1 µs 1.5 3 µs 0.2 0.7 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUX48C