SAVANTIC NS50N

SavantIC Semiconductor
Product Specification
NS50N
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type NS50P
APPLICATIONS
·For medium power linear amplifier
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
6
A
ICM
Collector current-Pulse
10
A
IB
Base current
2
A
PC
Collector power dissipation
TC=25
65
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
SavantIC Semiconductor
Product Specification
NS50N
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=30mA; IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=6A; IB=0.6A
1.5
V
VBE
Base-emitter on voltage
IC=6A ; VCE=4V
2.0
V
ICES
Collector cut-off current
VCE=60V; VEB=0
0.4
mA
ICEO
Collector cut-off current
VCE=30V; IB=0
0.7
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=0.3A ; VCE=4V
50
hFE-2
DC current gain
IC=3A ; VCE=4V
15
Transition frequency
IC=0.5A ; VCE=10V
3
fT
hFE-1 Classifications
A
B
50-100
80-160
2
60
UNIT
V
160
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
NS50N