2SA733T -60 V, -150 mA PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Power dissipation G H 1Emitter 2Collector 3Base PACKAGE INFORMATION Weight: 0.2100g (Approximately) J A D B Collector 2 A B C D E F G H J K 3 E Base C F 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25℃ Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. K unless otherwise noted) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V IC -100 mA PC 250 mW TJ, TSTG +150, -55 ~ +150 ℃ Collector Current -Continuous Total Power Dissipation Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25℃ Symbol unless otherwise specified) Min. Typ. Max. Unit Test Conditions BVCBO -60 - - V IC=-50uA, IE = 0 BVCEO -50 - - V IC=-1mA, IB = 0 BVEBO -5 - - V IE=-50uA, IC = 0 ICBO - - -100 nA VCB=-60V, IE = 0 IEBO - - -100 nA VEB=-5V, IC = 0 VCE(sat) - -0.18 -0.30 V IC=-100mA, IB=-10mA VBE -0.58 -0.62 -0.68 V hFE 90 200 600 fT VCE = -6V, IC = -1.0mA VCE=-6V, IC=-1mA 100 - - MHz Cob - - 6 pF VCE=-6V, IC=-10mA VCB = -10V, IE = 0, f = 1 MHz NF (noise figures) - - 20 dB VCE=-6V, IC=-0.3mA, Rg=10kΩ, f=100HZ CLASSIFICATION OF hFE Rank Range 01-June-2005 Rev. B R Q P K 90 - 180 135 - 270 200 - 400 300 - 600 Page 1 of 2 2SA733T Elektronische Bauelemente -60 V, -150 mA PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES 01-June-2005 Rev. B Page 2 of 2