BC807 -16W, -25W, -40W -500 mA, -50 V PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 Ideally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W A L 3 3 C B Top View 1 1 PACKAGE INFORMATION K 2 E 2 Weight: 0.0074 g (approximately) D Collector F G REF. MARKING BC807-16W: BC807-25W: BC807-40W: A B C D E F Base 5A 5B 5C, YL Emitter Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. REF. G H J K L ABSOLUTE MAXIMUM RATINGS at Ta = 25°C PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -45 V Emitter to Base Voltage VEBO -5 V IC -500 mA PC 200 mW TJ, TSTG +150, -55 ~ +150 ℃ Collector Current Collector Power Dissipation Junction, Storage Temperature CHARACTERISTICS at Ta = 25°C MIN. MAX. UNIT BVCBO SYMBOL -50 - V BVCEO -45 - V IC = -10 mA, IB = 0 BVEBO -5 - V IE = -1 uA, IC = 0 ICBO - -0.1 uA VCB = -20V, IE = 0 ICEO - -0.2 uA VCE = -20V, IB = 0 IEBO - -0.1 uA VEB = -5V, IC = 0 VCE(sat) - -0.7 V IC = -500mA, IB = -50 mA V VCE = -1 V, IC = -500 mA VBE(on) TEST CONDITIONS IC = -10 uA, IE = 0 - -1.2 100 160 250 250 400 600 VCE = -1 V, IC = -100 mA hFE(2) 40 - VCE = -1 V, IC = -500 mA fT 80 - MHz - 10 pF hFE(1) 807-16W 807-25W 807-40W COB 28-Jul-2010 Rev. F VCE = -5 V, IC = -10 mA, f = 100MHz VCB = -10V, f=1MHz Page 1 of 3 BC807 -16W, -25W, -40W Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor CHARACTERISTIC CURVES 28-Jul-2010 Rev. F Page 2 of 3 BC807 -16W, -25W, -40W Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor CHARACTERISTIC CURVES 28-Jul-2010 Rev. F Page 3 of 3