SECOS KTD1304

KTD1304
0.3 A, 25 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z
z
High emitter-base voltage: VEBO=12V(Min)
low on resistance: Ron=0.6Ω(max)(IB=1mA)
PACKAGE DIMENSIONS
SOT-23
3 Collector
1
Base
2
Emitter
A
L
K
3
Top View
1
2
V
J
B S
C
G
H
D
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
20
V
Emitter to Base Voltage
VEBO
12
V
IC
300
mA
Pc
200
mW
TJ, TSTG
+150, -55 ~ +150
℃
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
Min.
Typ.
Max.
Unit
25
-
-
V
Test Conditions
IC = 100 uA
BVCEO
20
-
-
V
IC = 1 mA
BVEBO
12
-
-
V
IE = 100 uA
ICBO
-
-
0.1
uA
VCB = 25 V
IEBO
-
-
0.1
uA
VEB = 12 V
hFE1 (FORWARD)
200
-
1000
VCE = 2 V, IC=4 mA
hFE1 (REVERSE)
20
-
-
VCE = 2 V, IC=4 mA
VCE(sat)
-
-
0.25
V
IC =100 mA, IB=10 mA
VBE(sat)
-
-
1
V
IC =100 mA, IB=10 mA
fT
-
60
-
MHz
COB
-
10
-
pF
VCB = 10 V, IE = 0, f = 1 MHz
R(ON)
-
0.6
-
Ω
VIN=0.3 V, IB=1mA, f=1KHz
01-June-2005 Rev. A
VCE = 10 V, IC = 1 mA, f = 100 MHz
Page 1 of 2
KTD1304
Elektronische Bauelemente
0.3 A, 25 V
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
KTD1304
01-June-2005 Rev. A
Page 2 of 2