SS8550W PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product FEATURES SOT-323 Collector 3 3 Power dissipation 2 A 1.800 2.200 1.150 1.350 Base C 0.800 1.000 2 Emitter L 3 B S Top View Operating & storage junction temperature 1 2 O Tj, Tstg : - 55 C ~ + 150 C V G Marking : Y2 C H D Max B A V(BR)CBO : - 40 V O Min 1 1 PCM : 0.2 W Collector Current ICM : -1.5 A Collector-base voltage Dim D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm J K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= 100μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN TYP MAX UNIT -40 V Ic=-0.1mA， IB=0 -25 V V(BR)EBO IE=-100μA，IC=0 -5 V Collector cut-off current ICBO VCB=-40 V , IE=0 -0.1 μA Collector cut-off current ICEO VCE=-20V , IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V , -0.1 μA HFE(1) VCE=-1V, IC=-100m A 120 HFE(2) VCE=-1V, IC=-800mA 40 IE=0 IC=0 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=-800 mA, IB= -80m A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800 mA, IB= -80m A -1.2 V Transition frequency fT output capacitance &RE VCE=-10V, IC=-50mA f=30MHz 100 MHz (VCB=-10V,IE=0,f=1MHz) 20 S) CLASSIFICATION OF h FE(1) Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A L H 120-200 200-350 Any changing of specification will not be informed individual Page 1 of 2 SS8550W PNP Silicon General Purpose Transistor Elektronische Bauelemente Typical Characteristics 1000 -0.5 VCE = -1V -0.4 IB=-3.5mA IB=-3.0mA IB=-2.5mA -0.3 IB=-2.0mA IB=-1.5mA -0.2 IB=-1.0mA -0.1 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB=-4.0mA 100 10 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 1 -0.1 -2.0 VCE[V], COLLECTOR-EMITTER VOLTAGE -1000 VBE(sat) -100 VCE(sat) -10 -0.1 VCE = -1V -1 -10 -100 -10 -1 -0.1 -0.0 -1000 100 f=1MHz IE=0 10 1 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance http://www.SeCoSGmbH.com -0.4 -0.6 -0.8 -1.0 -1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 -0.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT -1 -1000 -100 IC=10IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -100 Figure 2. DC current Gain -10000 Cob[pF], CAPACITANCE -10 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic 01-Jun-2002 Rev. A -1 1000 VCE=-10V 100 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Any changing of specification will not be informed individual Page 2 of 2