SECOS BC857S

BC857S
PNP Silicon
Multi-Chip Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-363
.055(1.40)
.047(1.20)
o
8
o
0
.026TYP
(0.65TYP)
.021REF
(0.525)REF
* Features
.053(1.35)
.045(1.15)
.096(2.45)
.085(2.15)
Power dissipation
PCM : 0.3 W (Tamp.= 25 C)
O
.018(0.46)
.010(0.26)
Collector current
ICM
.014(0.35)
.006(0.15)
: -0.2 A
.006(0.15)
.003(0.08)
.087(2.20)
.079(2.00)
Collector-base voltage
.004(0.10)
.000(0.00)
V(BR)CBO : -50 V
Operating & Storage junction Temperature
C1
B2
E2
E1
B1
C2
.043(1.10)
.035(0.90)
.039(1.00)
.035(0.90)
Tj, Tstg : -55 C~ +150 C
O
O
Marking : 3C
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25 C unless otherwise specified)
O
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-10µA, IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-10mA, IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-30V, IE=0
DC current gain
hFE
VCE(sat)
Collector-emitter saturation voltage
VCE(sat)
-15
VCE=-5V, IC=-2mA
125
nA
630
IC=-10mA, IB=-0.5mA
-0.3
V
I C=-100mA, IB=-5mA
-0.65
V
-0.75
V
-0.82
V
-0.6
VBE
VCE=-5V, IC=-2mA
VBE(1)
VCE=-5V, IC=-10mA
fT
V CE=-5V, IC=-10mA , f=100MHz
200
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
3.5
pF
Noise figure
NF
VCE=-5V, IC=-0.2mA
F=1kHZ, RS=2KΩ ,BW=200HZ
2.5
dB
Base-emitter voltage
Transition frequency
Note: 1 Short duration test pulse used to minimize self-heating effect.
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
Page 1 of 2
BC857S
PNP Silicon
Multi-Chip Transistor
Elektronische Bauelemente
250
1000
VCE = -5V
TA = 150°C
TA = 25°C
hFE, DC CURRENT GAIN
Pd, POWER DISSIPATION (mW)
(see Note 1)
200
150
100
TA = -50°C
100
10
50
1
0
0
100
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
100
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
0.5
1000
IC / IB = 20
fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE, COLLECTOR SATURATION VOLTAGE (V)
10
1
200
0.4
0.3
0.2
TA = 150°C
TA = 25°C
0.1
TA = -50°C
0
0.1
1
01-Jan-2006 Rev. B
VCE = -5V
100
10
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
http://www.SeCoSGmbH.com
TA = 25°C
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
Any changing of specification will not be informed individual
Page 2 of 2