BC857S PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055(1.40) .047(1.20) o 8 o 0 .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C) O .018(0.46) .010(0.26) Collector current ICM .014(0.35) .006(0.15) : -0.2 A .006(0.15) .003(0.08) .087(2.20) .079(2.00) Collector-base voltage .004(0.10) .000(0.00) V(BR)CBO : -50 V Operating & Storage junction Temperature C1 B2 E2 E1 B1 C2 .043(1.10) .035(0.90) .039(1.00) .035(0.90) Tj, Tstg : -55 C~ +150 C O O Marking : 3C Dimensions in inches and (millimeters) Electrical Characteristics( Tamb=25 C unless otherwise specified) O Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-30V, IE=0 DC current gain hFE VCE(sat) Collector-emitter saturation voltage VCE(sat) -15 VCE=-5V, IC=-2mA 125 nA 630 IC=-10mA, IB=-0.5mA -0.3 V I C=-100mA, IB=-5mA -0.65 V -0.75 V -0.82 V -0.6 VBE VCE=-5V, IC=-2mA VBE(1) VCE=-5V, IC=-10mA fT V CE=-5V, IC=-10mA , f=100MHz 200 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 3.5 pF Noise figure NF VCE=-5V, IC=-0.2mA F=1kHZ, RS=2KΩ ,BW=200HZ 2.5 dB Base-emitter voltage Transition frequency Note: 1 Short duration test pulse used to minimize self-heating effect. http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B Any changing of specification will not be informed individual Page 1 of 2 BC857S PNP Silicon Multi-Chip Transistor Elektronische Bauelemente 250 1000 VCE = -5V TA = 150°C TA = 25°C hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) (see Note 1) 200 150 100 TA = -50°C 100 10 50 1 0 0 100 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 100 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current 0.5 1000 IC / IB = 20 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE, COLLECTOR SATURATION VOLTAGE (V) 10 1 200 0.4 0.3 0.2 TA = 150°C TA = 25°C 0.1 TA = -50°C 0 0.1 1 01-Jan-2006 Rev. B VCE = -5V 100 10 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current http://www.SeCoSGmbH.com TA = 25°C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current Any changing of specification will not be informed individual Page 2 of 2