MMDT3904 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-363 * Features .055(1.40) .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o 0 .021REF (0.525)REF PCM : 0.2 W (Tamp.= 25 C) O ICM .053(1.35 .045(1.15 .096(2.45) .085(2.15) Collector current : 0.2 A .018(0.46) .010(0.26) Collector-base voltage C2 B1 .014(0.35) .006(0.15) E1 V(BR)CBO : 60 V .006(0.15) .003(0.08) .087(2.20) .079(2.00) .004(0.10) .000(0.00) Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O .043(1.10) .035(0.90) O E2 B2 C1 Marking: K6N or MA .039(1.00) .035(0.90) Dimensions in inches and (millimeters) ElECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) O Parameter Symbol Test conditions MIN MAX UNIT 60 V IB=0 40 V V(BR)EBO IE= 10μA， IC=0 5 V Collector cut-off current ICBO VCB= 30 V , IE=0 0.05 μA Collector cut-off current ICEO VCE= 30 V , IB=0 0.05 μA Emitter cut-off current IEBO VEB= 5V , 0.05 μA hFE（1） VCE= 1V, IC= 10mA 100 hFE（2） VCE= 1V, IC= 50mA 60 Collector-base breakdown voltage V(BR)CBO Ic= 10 μA， Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， Emitter-base breakdown voltage IE=0 IC=0 300 DC current gain Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 5mA 0.95 V fT Transition frequency Output Capacitance Cob VCE= 20V, IC= 10mA f=100MHz VCB=5V, IE= 0 f=1MHz 300 MHz 4 pF Delay time td VCC=3V, VBE=0.5V 35 nS Rise time tr IC=10mA , IB1=1mA 35 nS Storage time tS VCC=3V, IC=10mA 200 nS Fall time tf IB1= IB2= 1mA 50 nS http://www.SeCoSGmbH.com 06-May-2010 Rev. C Any changing of specification will not be informed individual Page 1 of 2 MMDT3904 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente 200 15 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) f = 1MHz 150 100 50 10 5 Cibo Cobo 0 0.1 0 0 25 50 100 75 125 150 200 175 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1000 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1 TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 0.1 VCE = 1.0V 0.01 1 0.1 1 10 0.1 1000 100 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 _I = 10 C VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE IB 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current http://www.SeCoSGmbH.com 06-May-2010 Rev.C Any changing of specification will not be informed individual Page 2 of 2