2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C FEATURES 2.7±0.2 7.6±0.2 1.3±0.2 Power dissipation PCM : 1mW（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V 4.0±0.1 10.8±0.2 O 3.1± 0.1 1 2 3 2.2±0.1 1.27±0.1 15.5±0.2 0.76 ±0.1 Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 ℃ 2.29 Typ. 4.58±0.1 0.5± 0.1 1: Emitter 2: Collector 3: Base Dimens ions in Millimeters CHARACTERISTICS（Tamb=25℃ Symbol Parameter Test conditions MIN MAX UNIT 180 V 120 160 V 5 V Collector-base breakdown voltage V(BR)CBO Ic= 1mA ， IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA ， IB=0 Collector-emitter breakdown voltage V(BR)EBO IE= 1mA， Ic=0 Collector cut-off current ICBO VCB=160 V , IE=0 10 μA Emitter cut-off current IEBO VEB= 4V , 10 μA DC current gain Collector-emitter saturation voltage VCE=5V, IC= 150 mA hFE(2) * VCE=5V, IC= 500mA VCE (sat) * IC=500 mA, IB=50mA fT Transition frequency C ob Collector output capacitance 2SD669 2SD669A IC =0 hFE(1) * VBE * Base-emitter voltage * unless otherwise specified） 2SD669 2SD669A 60 60 30 VCE=5V,IC= 150mA VCE=5V, IC=150mA VCB=10 V , IE =0,f=1MHz 320 200 1 V 1.5 V 140 MHz 14 pF The 2SD669 and 2SD669A are grouped by h FE1 as follows. Rank B C D 2SD 669 60 - 120 100 - 200 160 - 320 2SD669A 60 - 120 100 - 200 ---- http://www.SeCoSGmbH.com/ 10-Jul -2007 Rev. B Any changing of specification will not be informed individual Page 1 of 3 2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors Maximum Collector Dissipation Curve Area of Safe Operation 3 (13.3 V, 1.5 A) Collector current IC (A) Collector power dissipation PC (W) 30 20 10 1.0 0.3 DC Operation(TC = 25°C) 0.1 0.03 0.01 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristecs 0.8 0.6 TC = 25°C P C 2.0 = 20 W 1.5 0.4 1.0 0.2 Typical Transfer Characteristics 500 0.5 mA VCE = 5 V 200 100 50 Ta = 75°C 5 5. 5.40.5 .0 4 3.5 3.0 2.5 Collector current IC (mA) Collector current IC (A) 1.0 20 10 25 –25 0 5 2 IB = 0 25 200 –25 150 100 VCE = 5 V 1 1 3 http://www.SeCoSGmbH.com/ 10-Jul-2007 Rev. B 10 100 300 1,000 3,000 30 Collector current IC (mA) IC = 10 IB 1.0 0.8 0.6 5° C 250 1.2 0.4 25 DC current transfer ratio hFE C Collector to Emitter Saturation Voltage vs. Collector Current =7 75° Ta = 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) C 300 0 T DC Current Transfer Ratio vs. Collector Current 50 1 10 20 30 40 50 Collector to emitter voltage VCE (V) Collector to emitter saturation voltage VCE(sat) (V) 0 0.2 0 1 3 10 30 100 300 Collector current IC (mA) 1,000 Any changing of specification will not be informed individual Page 2of 3 2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors 1.2 Gain Bandwidth Product vs. Collector Current 240 IC = 10 IB Gain bandwidth product fT (MHz) Base to emitter saturation voltage VBE(sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 1.0 25°C TC = – 25 75 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 Collector current IC (mA) 1,000 200 VCE = 5 V Ta = 25°C 160 120 80 40 0 10 30 100 300 Collector current IC (mA) 1,000 Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 200 f = 1 MHz IE = 0 100 50 20 10 5 2 1 http://www.SeCoSGmbH.com/ 10-Jul-2007 Rev. B 10 2 5 20 50 100 Collector to base voltage VCB (V) Any changing of specification will not be informed individual Page 3 of 3