2SC4115S NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92S FEATURES 1.5 ±0.2 3.1±0.2 4.0±0.2 Power dissipation PD: 0.3 W (Tamb=25 ) I CM: 15.3 ±0.2 Collector current 3 A Collector-base voltage 0.43 +0.08 –0.07 0.46 +0.1 –0.1 V(BR)CBO: 40 V (1.27 Typ.) Operating and storage junction temperature range 0.76 ±0.1 1 TJ, Tstg: -55 2 3 2.54 ±0.1 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol 1: Emitter 2: Collector 3: Base unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 50µA , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=50µA, IC=0 6 V Collector cut-off current ICBO VCB=30V , IE=0 0.1 µA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 µA DC current gain hFE VCE=2 V, IC= 0.1A Collector-emitter saturation voltage* VCEsat fT Transition frequency z IC= 2A, 120 IB=0.1A VCE=2V, IC=0.5 A F=100MHz 560 0.5 200 V MHz Measured Using Pulse Current CLASSIFICATION OF hFE Rank Range http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Q R S 120-270 180-390 270-560 Any changing of specification will not be informed individual Page 1 of 2 2SC4115S NPN Silicon Elektronische Bauelemente General Purpose Transistor Electrical characteristic curves 1 0.5 Ta=100°C 25°C −40°C 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 0.2 0.4 0.6 0.8 1.0 1.2 1.6 6mA 1.2 4mA 0.8 2mA 0.4 0 0 1.4 BASE TO EMITTER VOLTAGE : VBE (V) Grounded emitter propagation characteristics 5000 Fig.2 VCE=2V DC CURRENT GAIN : hFE 2000 Ta=100°C 25°C −40°C 1000 500 200 100 50 20 10 5 1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2 5 10 0.5 0.2 Ta=100°C 25°C −40°C 0.1 50m 20m 10m 5m 2m 1m 2m 5m10m20m50m 0.1 0.2 0.5 1 2 5 10 0.2 Ta=100°C 25°C −40°C 50m Collector-emitter saturation voltage vs. collector current ( ) http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A IB=0A 0 0 1 20m 10m 5m 2m 1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 5 10 1000 100 50 20 10 5 2 −2 −5 −10 −20 −50 −100 −200 −500 −1000 5 1 lC/lB=20 Ta=100°C 25°C −40°C 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 Fig.6 Collector-emitter saturation voltage vs. collector current ( ) 1000 Ta=25°C f=1MHz IE=0A IC=0A 500 Cob 200 100 Cob 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.8 4 Grounded emitter output characteristics ( ) 0.5 Collector-emitter saturation voltage vs. collector current ( ) 200 1 −1 3 COLLECTOR CURRENT : IC (A) Ta=25°C VCE=2V 500 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 0.5 COLLECTOR CURRENT : IC (A) Fig.7 5mA 1 COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=20 10mA IB=0A 1.0 IC/IB=10 0.1 15mA 2 Grounded emitter output characteristics ( ) Fig.5 1 0.8 1 DC current gain vs. collector current 2 0.6 2 COLLECTOR CURRENT : IC (A) Fig.4 0.4 Ta=25°C 35mA 30mA 25mA 20mA 3 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 0.2 50mA 45mA 40mA 4 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 5 Ta=25°C 12mA 10mA 8mA 20mA 18mA 16mA 14mA COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2 VCE=2V 5 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 10 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Any changing of specification will not be informed individual Page 2 of 2