MMBT593 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A Collector 3 Medium Power Transistor L 3 3 C B Top View 1 MARKING 1 1 Base K 2 E 2 2 593 D Emitter F G H J ABSOLUTE MAXIMUM RATINGS Parameter Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction and Storage Temperature Symbol Ratings VCEO VCBO VEBO IC PD TJ, TSTG ELECTRICAL CHARACTERISTICS Parameter Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Base–Emitter Voltage Transition Frequency Collector Output Capacitance -100 -120 -5 -1 250 150, REF. Unit A B C D E F V V V A mW °C Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. (TA = 25°C unless otherwise noted) Symbol Min. Typ. Max. Unit BVCEO BVCBO BVEBO ICBO ICES IEBO hFE(1)* hFE(2)* hFE(3)* hFE(4)* VCE(sat)* VCE(sat)* -100 -120 -5 - - - V V V μA μA μA 100 100 100 50 - - - -0.1 -0.1 -0.1 300 -0.2 -0.3 VBE(sat)* VBE(on)* fT COB 150 - - -1.1 -1.0 5.0 V V MHz pF - V Test Conditions IC = -10mA, IB = 0 IC = -100μA, IE = 0 IE = -100μA, IC = 0 VCB = -100V, IE = 0 VCE = -100V, IE = 0 VEB = -4V, IC = 0 IC = - 1mA, VCE = - 5.0V IC = - 250mA, VCE = - 5.0V IC = - 0.5A, VCE = - 5.0V IC = - 1 A, VCE = - 5.0V IC = - 250mA, IB = - 25mA IC = - 500mA, IB = - 50mA IC = - 500mA, IB = - 50mA VCE = -5V, IC = 1mA VCE=-10V, IC=- 50mA, f=100MHz VCB = -10V, IE = 0, f = 1.0MHz *Pulse test: Pulse width ≦ 300μs, duty cycle ≦ 2% 01-June-2002 Rev. A Page 1 of 2 MMBT593 Elektronische Bauelemente PNP Silicon General Purpose Transistor CHARACTERISTICS CURVE 01-June-2002 Rev. A Page 2 of 2