SECOS MMBT593

MMBT593
PNP Silicon
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
A
Collector
3
Medium Power Transistor
L
3
3
C B
Top View
1
MARKING
1
1
Base
K
2
E
2
2
593
D
Emitter
F
G
H
J
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction and Storage Temperature
Symbol Ratings
VCEO
VCBO
VEBO
IC
PD
TJ, TSTG
ELECTRICAL CHARACTERISTICS
Parameter
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter Voltage
Transition Frequency
Collector Output Capacitance
-100
-120
-5
-1
250
150,
REF.
Unit
A
B
C
D
E
F
V
V
V
A
mW
°C
Millimeter
Min.
Max.
2.80
3.00
2.25
2.55
1.20
1.40
0.90
1.15
1.80
2.00
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
(TA = 25°C unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
BVCEO
BVCBO
BVEBO
ICBO
ICES
IEBO
hFE(1)*
hFE(2)*
hFE(3)*
hFE(4)*
VCE(sat)*
VCE(sat)*
-100
-120
-5
-
-
-
V
V
V
μA
μA
μA
100
100
100
50
-
-
-
-0.1
-0.1
-0.1
300
-0.2
-0.3
VBE(sat)*
VBE(on)*
fT
COB
150
-
-
-1.1
-1.0
5.0
V
V
MHz
pF
-
V
Test Conditions
IC = -10mA, IB = 0
IC = -100μA, IE = 0
IE = -100μA, IC = 0
VCB = -100V, IE = 0
VCE = -100V, IE = 0
VEB = -4V, IC = 0
IC = - 1mA, VCE = - 5.0V
IC = - 250mA, VCE = - 5.0V
IC = - 0.5A, VCE = - 5.0V
IC = - 1 A, VCE = - 5.0V
IC = - 250mA, IB = - 25mA
IC = - 500mA, IB = - 50mA
IC = - 500mA, IB = - 50mA
VCE = -5V, IC = 1mA
VCE=-10V, IC=- 50mA, f=100MHz
VCB = -10V, IE = 0, f = 1.0MHz
*Pulse test: Pulse width ≦ 300μs, duty cycle ≦ 2%
01-June-2002 Rev. A
Page 1 of 2
MMBT593
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
CHARACTERISTICS CURVE
01-June-2002 Rev. A
Page 2 of 2