SMG3J14
-3.7A, -30V,RDS(ON) 85mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A
SC-59
L
Description
The SMG3J14 provide the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
The SMG3J14 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
S
2
3
Top View
B
1
D
G
J
C
K
H
Features
Drain
* High-Speed Switching
Gate
Dim
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
Source
* Simple Drive Requirment
All Dimension in mm
D
* Low On-Resistance
Marking : 3J14
G
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1,2
-3.7
A
o
ID@TA=70 C
-3.0
A
IDM
-10
A
1.38
W
0.01
W/ C
PD@TA=25 C
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
V
V
o
Total Power Dissipation
-30
±20
ID@TA=25 C
3
Unit
o
VGS
3
Ratings
o
o
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
90
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SMG3J14
-3.7A, -30V,RDS(ON) 85mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
Max.
Unit
BVDSS
-30
_
_
V
BVDS/ Tj
_
-0. 02
_
V/ C
VGS(th)
-1.0
_
-3.0
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=±20V
_
_
-1
uA
VDS=-30V,VGS=0
_
_
-25
uA
VDS=-24V,VGS=0
_
_
85
_
_
145
_
_
170
o
Drain-Source Leakage Current (Tj=25 C)
Drain-Source Leakage Current (Tj=55 oC)
Static Drain-Source On-Resistance
2
IDSS
RDS(ON)
Total Gate Charge 2
Qg
_
5
8
Gate-Source Charge
Qgs
_
1
_
Gate-Drain ("Miller") Charge
Qgd
_
3
_
Turn-on Delay Time2
Td(ON)
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Tr
_
Td(Off)
Tf
Ciss
_
_
20
_
_
7
_
412
660
_
_
Coss
Reverse Transfer Capacitance
Crss
_
Gfs
_
Symbol
Min.
_
VGS=0V, ID=-250uA
o
Reference to 25 C, ID=-1mA
VGS=-10V, ID=- 1.35A
mΩ
VGS=-4.5V, ID=-1.35A
VGS=-4.0V, ID=-1.35A
nC
_
5
Output Capacitance
Forward Transconductance
8
o
Test Condition
ID=-3A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=- 1 A
nS
VGS=-10V
RG=3.3Ω
RD=15 Ω
pF
VGS=0V
VDS=-25V
_
S
VDS=-10V , ID=-3A
Typ.
Max.
Unit
_
-1.2
V
91
62
5
_
f=1.0MHz
_
Source-Drain Diode
Parameter
Forward On Voltage 2
Reverse Recovery Time
VSD
2
Reverse Recovery Charge
Trr
Qrr
_
_
20
15
_
_
nS
nC
Test Condition
IS=-1.2A, VGS=0V.
Is=-3A, VGS=0
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SMG3J14
-3.7A, -30V,RDS(ON) 85mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
=-1.35A
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SMG3J14
Elektronische Bauelemente
-3.7A, -30V,RDS(ON) 85mΩ
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4