SMG2310 3A, 60V,RDS(ON) 90mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SC-59 A The SMG2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SC-59 package is universally used for all L S 2 3 Top View B 1 commercial-industrial applications D G Features J C * Simple drive requirement K H * Small package outline Drain Gate Applications Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm D Source Dim * Power management in Notebook Computer * Portable equipment * Battery powered system G Marking : 2310 S Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS 3 o Continuous Drain Current, [email protected] ID@TA=25 C 3 o Continuous Drain Current, [email protected] Pulsed Drain Current ID@TA=70 C 1,2 IDM o PD@TA=25 C Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Ratings Unit 60 V ±20 V 3.0 A 2.3 A 10 A 1.38 W 0.01 W / oC o -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol 3 Rthj-a Ratings 90 Unit o C /W Any changing of specification will not be informed individual Page 1 of 4 SMG2310 3A, 60V,RDS(ON) 90mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance 2 Symbol Min. Typ. Max. Unit BVDSS 60 _ _ V BVDS/ Tj _ 0.05 _ V/ C VGS(th) 1.0 _ 3.0 V VDS=VGS, ID=250uA IGSS _ _ ±100 nA VGS=± 20V _ _ 10 uA VDS=60V,VGS=0 _ _ 25 uA VDS=48V,VGS=0 _ _ 90 IDSS RDS(ON) _ _ 120 Qg _ 6 10 Gate-Source Charge Qgs _ 1.6 _ Gate-Drain ("Miller") Charge Qgd 3 _ Total Gate Charge 2 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Td(ON) _ 6 _ Tr _ 5 _ Td(Off) _ 16 _ Tf _ 3 _ _ 490 780 55 _ 40 _ Ciss Output Capacitance _ Coss _ o mΩ Test Condition VGS=0V, ID=250uA o Reference to 25 C,ID=1mA VGS=10V, ID=3A VGS=4.5V, ID=2.0A nC ID=3A VDS=48V VGS=4.5V VDD=30V ID=1A nS VGS=10V RG=3.3Ω RD=30 Ω pF VGS=0V VDS=25V VDS=5V, ID=3A Reverse Transfer Capacitance Crss _ Forward Transconductance Gfs _ 5.0 _ S Min. Typ. Max. Unit VSD _ _ 1.2 V Trr _ _ nS f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Charge Symbol Qrr _ 25 26 _ nC Test Condition IS=1.2A, VGS=0V. Is=3A,VGS=0V dl/dt=100A/uS Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SMG2310 Elektronische Bauelemente 3A, 60V,RDS(ON) 90mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SMG2310 Elektronische Bauelemente 3A, 60V,RDS(ON) 90mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4