SST6301K
640mA, 30V,RDS(ON) 1.0Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
SOT-26
Description
0.20
0.37Ref.
The SST6301K utiltzed advance processing techniques to achieve the lowest
0.60 Ref.
2.60
3.00
possible on-resistance, extermely efficient and cost-effectiveness device.
0.25
The SST6301K is universally used for all commercial-industrial applications.
1.40
1.80
0.30
0.55
0.95 Ref.
0~0.1
2.70
3.10
1.20Ref.
o
0
o
10
Features
Dimensions in millimeters
* RoHS Compliant
* Simple Drive Requirement
D1
* Small Package Outline
D2
G2
G1
S1
D1
S1
D2
6
5
4
301E
Date Code
S2
1
2
3
G1
S2
G2
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
3
Continuous Drain Current,VGS@10V
3
Continuous Drain Current,VGS@10V
Pulsed Drain Current 1,2
Total Power Dissipation
30
V
±16
V
640
mA
o
ID@TA=70 C
500
mA
IDM
950
mA
1.2
W
0.01
W/ C
ID@TA=25 C
o
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Unit
o
VGS
Gate-Source Voltage
Ratings
Tj, Tstg
o
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (Max)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Rthj-a
Ratings
110
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SST6301K
640mA, 30V,RDS(ON) 1.0Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
o
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance
Symbol
Min.
Typ.
Max.
Unit
Test Condition
BVDSS
30
_
_
V
VGS=0V, ID= 250uA
BVDS/ Tj
_
0.06
_
V/ oC
VGS(th)
0.5
_
1.5
V
VDS=VGS, ID=250uA
IGSS
_
_
± 10
uA
VGS=±16V
_
_
1
uA
VDS=30V,VGS=0
_
_
100
uA
VDS= 24V,VGS=0
_
_
1
_
_
IDSS
RDS(ON)
2
_
_
Qg
_
1
1.6
Gate-Source Charge
Qgs
_
0.5
_
Gate-Drain ("Miller") Charge
Qgd
0.5
_
12
_
10
_
Total Gate Charge 2
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Tr
_
Td(Off)
_
Tf
_
29
_
_
32
50
8
_
6
_
Coss
Reverse Transfer Capacitance
Forward Transconductance
_
56
VGS=10V, ID=500mA
Ω
3
Td(ON)
Ciss
Output Capacitance
_
_
Reference to 25oC ,ID= 1mA
VGS=4.5V, ID=400mA
VGS=2.7V, ID=200mA
nC
ID=600mA
VDS=50V
VGS=4.5V
VDD= 30V
ID= 600mA
nS
VGS=10V
RG=3.3Ω
RD=52 Ω
pF
VGS=0V
VDS=25V
f=1.0MHz
Crss
_
Gfs
_
600
_
mS
VDS=10V, ID=600mA
Symbol
Min.
Typ.
Max.
Unit
Test Condition
_
_
1.2
V
IS=1.2A , VGS=0V.
Source-Drain Diode
Parameter
Forward On Voltage 2
VS D
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
2
3.Surface mounted on 1 in copper pad of FR4 board; 180 OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SST6301K
Elektronische Bauelemente
640mA, 30V,RDS(ON) 1.0Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SST6301K
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
640mA, 30V,RDS(ON) 1.0Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
180
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4