SSD408 18A, 30V,RDS(ON)18mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications. Features * Simple Drive Requirement * Lower On-resistance * Fast Switching Characteristic D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS@10V ID @TC=25 18 A Continuous Drain Current, VGS@10V ID @TC=100 14 A 70 A 60 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor Single Pulse Avalanche Energy 0.4 2 Single Pulse Avalanche Current Operating Junction and Storage Temperature Range W/ EAS 60 mJ IAS 35 A Tj, Tstg -55 ~ +175 Symbol Value Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 2.5 /W Thermal Resistance Junction-ambient Max. Rthj-a 50 /W http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 SSD408 18A, 30V,RDS(ON)18mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250uA gfs - 25 - S VDS=5V, ID=18A IGSS - - ±100 nA VGS= ±20V - - 1 uA VDS=30V, VGS=0 - - 5 uA VDS=24V, VGS=0 - - 18 - - 27 Forward Transconductance Gate-Source Leakage Current Drain- Source Leakage Current(Tj=25 ) Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance3 3 IDSS RDS(ON) m Total Gate Charge Qg - 19.8 25 Gate-Source Charge Qgs - 2.5 - Gate-Drain (“Miller”) Change Qgd - 3.5 - Td(on) - 4.5 - Tr - 3.9 - Td(off) - 17.4 - Tf - 3.2 - Ciss - 1040 1250 Output Capacitance Coss - 180 - Reverse Transfer Capacitance Crss - 110 - Symbol Min. Typ. Max. Unit VSD - - 1.0 V IS - - 18 A Reverse Recovery Time Trr - 19 - ns Reverse Recovery Charge Qrr - 8 - nC 3 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Test Conditions VGS=10V, ID=18A VGS=4.5V, ID=10A nC ID=18A VDS=15V VGS=10V ns VDS=15V VGS=10V RG=3 RL=0.82 pF VGS=0V VDS=15V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage3 Continuous Source Current (Body Diode) 3 Test Conditions IS=1A, VGS=0V IS=18A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 , VDD=25V, L=0.1mH, RG=25 . 3. Pulse width 300us, duty cycle 2%. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SSD408 Elektronische Bauelemente 18A, 30V,RDS(ON)18mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1010 1 0.10.1 0. 0.01 0.001 0.0 0.0001 0.0 0.0000101 Fig 5. Maximum Drain Current v.s. Case Temperature http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 6. Type Power Dissipation Any changing of specification will not be informed individual Page 3 of 4 SSD408 18A, 30V,RDS(ON)18mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 0.00001 0.0001 0.0001 0.0 01 0.001 0.01 0.1 0.1 11 10 10 10 0 1 000 1000 Fig 11. Normalized Maximum Transient Thermal Impedance http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 4 of 4