SMG3401
-4.2A, -30V,RDS(ON) 50mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
A suffix of "-C" specifies halogen & lead-free
A
Description
SC-59
L
The SMG3401 uses advanced trench technology
to provide excellent on-resistance extremely
efficient and cost-effectiveness device.
The SMG3401 is universally used for all
commercial-industrial applications.
S
2
3
Top View
B
1
D
G
J
C
K
H
Features
Drain
* Small Package Outline
Gate
* Lower Gate Charge
Source
* RoHS Compliant
D
Dim
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
All Dimension in mm
G
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V
±12
V
-4.2
A
ID@TA=70 C
-3.5
A
IDM
30
A
1.38
W
0.01
W/ C
VGS
Continuous Drain Current
3
Continuous Drain Current
3
o
ID@TA=25 C
o
Pulsed Drain Current1,2
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
Unit
-30
VDS
Gate-Source Voltage
Ratings
o
o
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
90
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SMG3401
-4.2A, -30V,RDS(ON) 50mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
_
_
V
VGS=0V, ID=-250uA
Gate Threshold Voltage
VGS(th)
-0.7
_
-1.3
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 12V
_
_
-1
uA
VDS=-24V,VGS=0
_
_
-5
uA
VDS=-24V,VGS=0
_
_
_
_
_
_
120
9.4
_
Gate-Source Leakage Current
o
Drain-Source Leakage Current (Tj=25 C)
Drain-Source Leakage Current (Tj=55 oC)
Static Drain-Source On-Resistance
2
IDSS
RDS(ON)
Total Gate Charge 2
Qg
_
Gate-Source Charge
Qgs
_
2
_
Gate-Drain ("Miller") Charge
Qgd
_
3
_
Turn-on Delay Time2
Td(ON)
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Tr
_
Td(Off)
_
Tf
_
Ciss
_
_
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Rg
_
Gate Resistance
6.3
3.2
12
_
954
_
6
VGS=-4.5V, ID=-4.0A
VGS=-2.5V, ID=-1.0A
nC
ID=-4A
VDS=-15V
VGS=-4.5V
VDS=-15V
_
_
77
mΩ
_
38.2
115
VGS=-10V, ID=- 4.2A
50
65
Test Condition
nS
VGS=-10V
RG= 6 Ω
RL =3.6 Ω
_
pF
VGS=0V
VDS=-15V
f=1.0MHz
_
_
Ω
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage 2
Reverse Recovery Time
Symbol
VSD
2
Reverse Recovery Charge
Continuous Source Current (Body Diode)
Trr
Qrr
IS
Min.
Typ.
Max.
Unit
_
_
-1.0
V
_
_
_
20.2
11.2
_
_
_
-2.2
nS
nC
A
Test Condition
IS=-1.0A, VGS=0V.
Is=-4 A, VGS=0
dl/dt=100A/uS
VD=VG=0V,VS=-1.0V
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 in 2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SMG34031
-4.2A, -30V,RDS(ON) 50mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1
0.1
0.1
0.01
0.
0.001
0.0
0.0001
0.0
0.00001
0.00
01
0.000001
01
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SMG3401
-4.2A, -30V,RDS(ON) 50mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Normalized Maximum Transient Thermal Impedance
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 4 of 4