SSD40N03
36A, 30V,RDS(ON)21mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
Description
TO-252
The SSD40N03 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-252 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Features
* Repetitive Avalanche Rated
* Dynamic dv/dt Rating
* Simple Drive Requirement
* Fast Switching
D
REF.
A
B
C
D
E
F
S
G
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.20
2.80
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
o
Ratings
Unit
30
V
± 20
V
Continuous Drain Current,VGS@10V
ID@TC=25 C
36
A
Continuous Drain Current,VGS@10V
o
ID@TC=100C
25
A
IDM
150
A
50
W
0.4
W/ C
-55~+150
o
Pulsed Drain Current
1
Total Power Dissipation
o
PD@TC=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
o
C
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
2.5
o
Thermal Resistance Junction-ambient
Max.
Rthj-a
110
o
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 5
SSD40N03
36A, 30V,RDS(ON)21mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
30
_
BVDS/ Tj
_
VGS(th)
1.0
_
3.0
V
IGSS
_
_
±100
nA
VGS=±20V
_
_
25
uA
VDS=30V,VGS=0
_
_
250
uA
VDS=24V,VGS=0
_
18
21
_
24
30
17
_
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
Static Drain-Source On-Resistance
IDSS
RD S (O N )
Total Gate Charge2
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
3
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Ciss
0.037
_
_
Max.
_
V
_
V/ C
_
10
_
7.2
_
60
_
22.5
_
10
_
800
_
380
_
_
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
133
Forward Transconductance
Gfs
_
26
Symbol
Min.
Typ.
Unit
o
mΩ
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VDS=VGS, ID=250uA
VGS=10V, ID=18A
VGS=4.5V, ID=14A
nC
ID=18A
VDS=24V
VGS= 5V
VDD=15V
ID=18A
nS
VGS=10V
RG=3.3Ω
RD=0.83Ω
pF
VGS=0V
VDS=25V
_
S
VDS=10V, ID=18A
Max.
Unit
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage 2
VSD
_
_
Continuous Source Current(Body Diode)
IS
_
_
1
Pulsed Source Current(Body Diode)
ISM
Test Condition
o
1.3
V
IS=36 A, VGS=0V.Tj=25C
_
36
A
VD=VG=0V,VS=1.3 V
_
150
A
Notes: 1.Pulse width limited by safe operating area.
2. Pulse width≦300us, dutycycle≦2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 5
SSD40N03
Elektronische Bauelemente
36A, 30V,RDS(ON)21mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Maximum Drain Current
v.s. Case Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Type Power Dissipation
Any changing of specification will not be informed individual
Page 3 of 5
SSD40N03
Elektronische Bauelemente
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
36A, 30V,RDS(ON)21mΩ
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 4 of 5
SSD40N03
Elektronische Bauelemente
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
36A, 30V,RDS(ON)21mΩ
N-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 5 of 5