SMG1333
-550mA, -20V,RDS(ON) 800mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SC-59
A
Description
L
The SMG1333 provide the designer with the best
S
2
combination of fast switching, low on-resistance
3
Top View
B
1
and cost-effectiveness.
D
G
Features
J
C
* Simple Gate Drive
* Small package outline
K
H
* Fast switching speed
Drain
Gate
Applications
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
All Dimension in mm
D
Source
Dim
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
G
Marking : 1333
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
VDS
Sate-Source Voltage
Continuous Drain Current
3
3
1,2
Total Power Dissipation
Unit
-20
V
±12
V
-550
mA
o
ID@TA=70 C
-440
mA
IDM
-2.5
A
1
W
ID@TA=25 C
o
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Ratings
o
VGS
Continuous Drain Current
Pulsed Drain Current
Symbol
Tj, Tstg
o
0.008
W/ C
-55~+150
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Rthj-a
Ratings
125
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SMG1333
-550mA, -20V,RDS(ON) 800mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVDSS
-20
_
_
V
BVDS/ Tj
_
-0.01
_
V/
VGS(th)
-0.5
_
-1.2
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 12V
_
_
-1
uA
VDS=-20V,VGS=0
_
_
-10
uA
VDS=-16V,VGS=0
_
_
600
_
_
800
_
_
Qg
_
1.7
2.7
Gate-Source Charge
Qgs
_
0.3
_
Gate-Drain ("Miller") Charge
Qgd
0.4
_
5
_
Tr
_
8
_
Td(Off)
_
10
_
Tf
_
2
_
_
66
105.6
25
_
20
_
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
o
Drain-Source Leakage Current (Tj=25 C)
Drain-Source Leakage Current (Tj=70oC)
Static Drain-Source On-Resistance
Total Gate Charge
2
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
2
IDSS
RDS(ON)
Td(ON)
Ciss
Coss
_
_
_
Test Condition
VGS=0V, ID=-250uA
o
Reference to 25 C,ID=-1mA
VGS=-10V, ID=-550mA
mΩ
1000
VGS=-4.5V, ID=-500mA
VGS=-2.5V, ID=-300mA
nC
ID=-500mA
VDS=-16V
VGS=-4.5V
VDS=-10V
ID=-500mA
nS
VGS=-5V
RG=3.3Ω
RD=20Ω
pF
VGS=0V
VDS=-10V
f=1.0MHz
Crss
_
Gfs
_
1.0
_
S
VDS=-5V, ID=-550mA
Symbol
Min.
Typ.
Max.
Unit
Test Condition
_
_
-1.2
V
Source-Drain Diode
Parameter
Forward On Voltage 2
VSD
IS=-300mA, VGS=0V.
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SMG1333
Elektronische Bauelemente
-550mA, -20V,RDS(ON) 800mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 4
SMG1333
Elektronische Bauelemente
-500mA, -20V,RDS(ON) 800mΩ
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4