Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS85N06 60V N-Channel MOSFET FEATURES ■ RDS(on) (Max 0.013 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (175°C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Value Unit Drain-Source Voltage 60 V Drain Current -Continuous (TC=25℃) 85 A Drain Current -Continuous (TC=100℃) 60 A IDM Drain Current -Pulsed 340 A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy 929 mJ EAR Repetitive Avalanche Energy 17.6 mJ dv/dt Peak Diode Recovery dv/dt 7.0 V/ns Power Dissipation (TC=25℃) 176 W 1.17 W/℃ –55 to + 175 ℃ 300 ℃ VDSS ID PD - Derate above 25℃ TJ,TSTG TL Parameter Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds • Drain current limited by maximum junction temperature Preliminary Data Sheet Bruckewell Technology Corp., Ltd. Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case –– 0.85 RθJA Junction-to-Ambient –– 62.5 Electrical Characteristics Symbol Units ℃/W (Tc=25°C unless otherwise specified) Parameter Test Conditions Min Type Max Units 60 –– –– V ID=250µA, Referenced to 25℃ –– 0.07 –– V/℃ VDS=60V , VGS= 0 V –– –– 10 µA VDS=48V , VC= 125℃ –– –– 100 µA VGS=20V , VDS=0 V –– –– 100 nA VGS=-20V , VDS=0 V –– –– –100 nA VDS=VGS,ID=250µA 2.0 –– 4.0 V VGS=10V,ID=42.5A –– 10.5 13 mΩ –– 2500 –– pF –– 900 –– pF –– 160 –– pF –– 40 -- ns Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0 V , ID=250µA △BVDSS Breakdown Voltage Temperature /△TJ Coefficient IDSS Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1.0MHz Switching Characteristics td(on) tr td(off) Turn-On Time Turn-On Rise Time VDS=42.5 V, ID=30A, –– 200 -- ns Turn-Off Delay Time RG=25Ω –– 150 -- ns –– 150 -- ns –– 70 -- nC –– 20 –– nC –– 30 –– nC tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=48V,ID=85A, VGS=10V Preliminary Data Sheet Bruckewell Technology Corp., Ltd. Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current –– –– 85 ISM Pulsed Source-Drain Diode Forward Current –– –– 340 VSD Source-Drain Diode Forward Voltage IS=85A, VGS=0V –– –– 1.5 V trr Reverse Recovery Time IS=85 A , VGS= 0V –– 70 –– ns Qrr Reverse Recovery Charge diF/dt=100A/µs –– 130 –– µC Notes; 1. Repeativity rating : pulse width limited by junction temperature 2. L = 150uH, IAS =85A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 85A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. A